Evidence map›Paper›PMID 35744453›Full record

ArticleMicromachines2022

Compact Integration of Hydrogen-Resistant a-InGaZnO and Poly-Si Thin-Film Transistors.

Yunping Wang, Yuheng Zhou, Zhihe Xia, Wei Zhou, Meng Zhang, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Shengdong Zhang, Lei Lu

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiONanomaterials (Basel, Switzerland) · 2022
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Yunping WangSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.ORCID 0000-0001-7864-1439
Yuheng ZhouSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
Zhihe XiaState Key Laboratory of Advanced Displays and Optoelectronics and Technologies, Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China.
Wei ZhouState Key Laboratory of Advanced Displays and Optoelectronics and Technologies, Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China.
Meng ZhangCollege of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China.
Fion Sze Yan YeungState Key Laboratory of Advanced Displays and Optoelectronics and Technologies, Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China.
Man WongState Key Laboratory of Advanced Displays and Optoelectronics and Technologies, Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China.
Hoi Sing KwokState Key Laboratory of Advanced Displays and Optoelectronics and Technologies, Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China.
Shengdong ZhangSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.
Lei LuSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The low-temperature poly-Si oxide (LTPO) backplane is realized by monolithically integrating low-temperature poly-Si (LTPS) and amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in the same display backplane. The LTPO-enabled dynamic refreshing rate can significantly reduce the display's power consumption. However, the essential hydrogenation of LTPS would seriously deteriorate AOS TFTs by increasing the population of channel defects and carriers. Hydrogen (H) diffusion barriers were comparatively investigated to reduce the H content in amorphous indium-gallium-zinc oxide (a-IGZO). Moreover, the intrinsic H-resistance of a-IGZO was impressively enhanced by plasma treatments, such as fluorine and nitrous oxide. Enabled by the suppressed H conflict, a novel AOS/LTPS integration structure was tested by directly stacking the H-resistant a-IGZO on poly-Si TFT, dubbed metal-oxide-on-Si (MOOS). The noticeably shrunken layout footprint could support much higher resolution and pixel density for next-generation displays, especially AR and VR displays. Compared to the conventional LTPO circuits, the more compact MOOS circuits exhibited similar characteristics.

Indexed as

amorphous indium–gallium–zinc oxide (a–IGZO)diffusion barrierfluorinationhydrogen–resistantlow–temperature poly–Si oxide (LTPO)metal–oxide–on–Si (MOOS)nitrous oxide (N2O)thin–film transistors (TFT)

Identifiers

PMID35744453
PMCPMC9227547

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.