Evidence map›Paper›PMID 35732761›Full record

ReviewNature2022

Two-dimensional materials prospects for non-volatile spintronic memories.

Hyunsoo Yang, Sergio O Valenzuela, Mairbek Chshiev, Sébastien Couet, Bernard Dieny, Bruno Dlubak, Albert Fert, Kevin Garello, Matthieu Jamet, Dae-Eun Jeong and 7 more

Abstract readReview
PubMed Publisher
In one paragraph

Review in Nature, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 56 papers.

0numbers the graph read from it
0cells of the map it votes in
56citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

56 citing papers in PubMed.

  1. Article
  2. Article
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  4. Article
  5. Review
  6. Article
  7. Multi-State Memory in 2D Magnets via Thickness-Engineered Growth.Advanced materials (Deerfield Beach, Fla.) · 2026
    Article
  8. Article
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  11. Article
  12. Review
  13. Article
  14. Article
  15. Article
  16. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Hyunsoo YangDepartment of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore. eleyang@nus.edu.sg.ORCID http://orcid.org/0000-0003-0907-2898
Sergio O ValenzuelaCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain. SOV@icrea.cat.ORCID http://orcid.org/0000-0002-4632-8891
Mairbek ChshievUniversité Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France.ORCID http://orcid.org/0000-0001-9232-7622
Sébastien CouetImec, Leuven, Belgium.
Bernard DienyUniversité Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France.
Bruno DlubakUnité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.ORCID http://orcid.org/0000-0001-5696-8991
Albert FertUnité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.ORCID http://orcid.org/0000-0003-0670-8539
Kevin GarelloUniversité Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France.ORCID http://orcid.org/0000-0003-0236-322X
Matthieu JametUniversité Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France.ORCID http://orcid.org/0000-0002-8247-4677
Dae-Eun JeongR&D Center, Samsung Electronics Co., Hwasung, South Korea.
Kangho LeeFoundry Business, Samsung Electronics Co., Giheung, South Korea.
Taeyoung LeeGLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore.
Marie-Blandine MartinUnité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
Gouri Sankar KarImec, Leuven, Belgium.
Pierre SénéorUnité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
Hyeon-Jin ShinInorganic Material Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, South Korea.ORCID http://orcid.org/0000-0002-6992-6341
Stephan RocheCatalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain. stephan.roche@icn2.cat.ORCID http://orcid.org/0000-0003-0323-4665

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.

Identifiers

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.