ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2022
Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.
Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 15 papers.
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Who cites it
15 citing papers in PubMed.
- Self-Powered Broadband High-Responsivity Photodetectors: p-(CuS)Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Sacrificial polyvinyl alcohol substrates to transfer atomic layer deposition grown dielectric thin films.Scientific reports · 2026Article
- Article
- Pt/AlSmall methods · 2025Article
- Heterojunction-Driven Stochasticity: Bi-Heterojunction Noise-Enhanced Negative Transconductance Transistor in Image Generation.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Prospects of Improving Efficiency and Stability of Hybrid Perovskite Solar Cells by Alumina Ultrathin Films.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Unveiling hydrogen chemical states in supersaturated amorphous alumina via machine learning-driven atomistic modeling.npj computational materials · 2025Article
- Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.Discover nano · 2024Article
- Article
- Atomic Layer Deposition-A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Review
- Influence of NFMaterials (Basel, Switzerland) · 2023Article
- An Amorphous Native Oxide Shell for High Bias-Stress Stability Nanowire Synaptic Transistor.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023Article
- Interfacial Properties of the SnO/κ-GaACS applied materials & interfaces · 2023Article
- An efficient transition metal chalcogenide sensor for monitoring respiratory alkalosis.3 Biotech · 2023Article
- Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Review
Corrections and comments
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Authors and funding
4 authors.
Funding
Abstract
Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.