Evidence map›Paper›PMID 35702203›Full record

ArticleRSC advances2022

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles.

Mengying Liu, Weijie Li, Dan Cheng, Xuan Fang, Hongbin Zhao, Dengkui Wang, Jinhua Li, Yingjiao Zhai, Jie Fan, Haizhu Wang and 3 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in RSC advances, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Adsorption Behavior of NO and NOMaterials (Basel, Switzerland) · 2024
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

13 authors.

Mengying LiuState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.ORCID https://orcid.org/0000-0002-2720-8616
Weijie LiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Dan ChengState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Xuan FangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Hongbin ZhaoState Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals Beijing 100088 P. R. China zhaohongbin@ginm.com.
Dengkui WangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.ORCID https://orcid.org/0000-0002-4787-7710
Jinhua LiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Yingjiao ZhaiState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Jie FanState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Haizhu WangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Xiaohua WangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Dan FangState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.
Xiaohui MaState Key Laboratory of High Power Semiconductor Lasers, School of Physics, Changchun University of Science and Technology 7089 Wei-Xing Road Changchun 130022 P. R. China fangx@cust.edu.cn wangdk@cust.edu.cn.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensitivity features. And a reduction and transition of the bandgap was observed when the As/Sb and Sb/Bi LHS existed under compressive strain. The density of states and the conduction band minimum-valence band maximum characteristics exhibited corresponding changes under the strain. Then a spatial charge-separation phenomenon and strong optical absorption properties in the mid-infrared range can also be observed from calculated results. Theoretical research into As/Sb and Sb/Bi LHSs has laid a solid foundation for As/Sb and Sb/Bi LHS device manufacture.

Identifiers

PMID35702203
PMCPMC9106107

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.