ArticleChemical science2022
Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics.
Liyan Hu, Mingjie Feng, Xia Wang, Shunchang Liu, Jinpeng Wu, Bin Yan, Wenbo Lu, Fang Wang, Jin-Song Hu, Ding-Jiang Xue
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In one paragraphArticle in Chemical science, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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10 authors.
Liyan HuBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
Mingjie FengBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
Xia WangSchool of Materials Science and Engineering, Hubei Univeristy Wuhan 430062 China.
Shunchang LiuBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.ORCID https://orcid.org/0000-0002-1990-5737 Jinpeng WuBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
Bin YanBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
Wenbo LuBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.
Fang WangKey Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University Taiyuan 030006 China.ORCID https://orcid.org/0000-0003-3567-9108 Jin-Song HuBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.ORCID https://orcid.org/0000-0002-6268-0959 Ding-Jiang XueBeijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 China djxue@iccas.ac.cn.ORCID https://orcid.org/0000-0002-7599-0008 Funding
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6 · The paper itselfAbstract
Solution processes have been widely used to construct chalcogenide-based thin-film optoelectronic and electronic devices that combine high performance with low-cost manufacturing. However, Ge(ii)-based chalcogenide thin films possessing great potential for optoelectronic devices have not been reported using solution-based processes; this is mainly attributed to the easy oxidation of intermediate Ge(ii) to Ge(iv) in the precursor solution. Here we report solution-processed deposition of Ge(ii)-based chalcogenide thin films in the case of GeSe and GeS films by introducing hypophosphorous acid as a suitable reducing agent and strong acid. This enables the generation of Ge(ii) from low-cost and stable GeO
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PMID35685789
PMCPMC9132017
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