ArticleNational science review2022
Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
Article in National science review, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 16 papers.
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Who cites it
16 citing papers in PubMed.
- Quantum noise spectroscopy of nanoscale charge defects in silicon carbide at room temperature.Science advances · 2026Article
- Surveying optically addressable spin qubits for quantum information and sensing technology.npj quantum materials · 2026Review
- Non-invasive bioinert room-temperature quantum sensor from silicon carbide qubits.Nature materials · 2025Article
- Coherent photoelectrical readout of single spins in silicon carbide at room temperature.Nature communications · 2025Article
- Room-temperature waveguide integrated quantum register in a semiconductor photonic platform.Nature communications · 2024Article
- Robust single modified divacancy color centers in 4H-SiC under resonant excitation.Nature communications · 2024Article
- Quantum sensing with optically accessible spin defects in van der Waals layered materials.Light, science & applications · 2024Article
- 7D High-Dynamic Spin-Multiplexing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna.Nano letters · 2024Article
- Room temperature optically detected magnetic resonance of single spins in GaN.Nature materials · 2024Article
- High-Quality Amorphous Silicon Carbide for Hybrid Photonic Integration Deposited at a Low Temperature.ACS photonics · 2023Article
- Engineering the formation of spin-defects from first principles.Nature communications · 2023Article
- Recent advances in theNanophotonics (Berlin, Germany) · 2023Review
- Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers.Nanomaterials (Basel, Switzerland) · 2023Article
- Article
- Stability and molecular pathways to the formation of spin defects in silicon carbide.Nature communications · 2021Article
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Authors and funding
19 authors.
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Abstract
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room-temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2[Formula: see text], and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast ([Formula: see text]) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.
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