Evidence map›Paper›PMID 35630942›Full record

ArticleNanomaterials (Basel, Switzerland)2022

Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15-22 nm) Nanowire FETs with Various Channel Diameters.

Seunghwan Lee, Jun-Sik Yoon, Junjong Lee, Jinsu Jeong, Hyeok Yun, Jaewan Lim, Sanguk Lee, Rock-Hyun Baek

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Seunghwan LeeThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.ORCID 0000-0003-3137-9335
Jun-Sik YoonThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.ORCID 0000-0002-3132-4556
Junjong LeeThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
Jinsu JeongThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.ORCID 0000-0002-0000-6416
Hyeok YunThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.ORCID 0000-0003-4597-4389
Jaewan LimThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.ORCID 0000-0002-2720-0008
Sanguk LeeThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.
Rock-Hyun BaekThe Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Gyeongbuk, Korea.ORCID 0000-0002-6175-8101

Funding

BK21 FOUR Program No Grant NumberNational Research Foundation of Korea NRF-2020M3F3A2A02082436National Research Foundation of Korea NRF-2022R1C1C1004925POSTECH-Samsung Electronics Industry-Academia Cooperative Research Center No Grand Number
6 · The paper itself

Abstract

In this study, threshold voltage (

Indexed as

dopant diffusionmetal gate granularitynanowire diameterPelgrom’s lawSNWFETthreshold voltageultrashort gate-lengthvariability modeling

Identifiers

PMID35630942
PMCPMC9144030

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.