ArticleNanomaterials (Basel, Switzerland)2022
Study of Electronic and Transport Properties in Double-Barrier Resonant Tunneling Systems.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
2 citing papers in PubMed, 16 citations in OpenAlex.
- Resonant Tunneling Nanostructures: Eliminating Current Saturation on Negative Differential Conductivity Region in Compact Dissipative Simulations.Nanomaterials (Basel, Switzerland) · 2025Article
- Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel.Sensors (Basel, Switzerland) · 2023Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors at 2 institutions in 2 countries.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect of donor density and external potentials in a self-consistent way. The calculation method uses the finite-element approach and the Landauer formalism. Quasi-stationary states, transmission probability, current density, cut-off frequency, and conductance are discussed considering variations in the donor density and the width of the central well. For all arrangements, the appearance of negative differential resistance (NDR) is evident, which is a fundamental characteristic of practical applications in devices. Finally, a comparison of the simulation with an experimental double-barrier system based on InGaAs with AlAs barriers reported in the literature has been obtained, evidencing the position and magnitude of the resonance peak in the current correctly.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.