ArticleNanomaterials (Basel, Switzerland)2022
Modeling the Radial Growth of Self-Catalyzed III-V Nanowires.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- Recent Advances in the Growth and Compositional Modelling of III-V Nanowire Heterostructures.Nanomaterials (Basel, Switzerland) · 2024Review
- An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires.Nanomaterials (Basel, Switzerland) · 2023Review
- Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates.Nanomaterials (Basel, Switzerland) · 2022Article
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2 authors.
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Abstract
A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions.
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