ArticleNanomaterials (Basel, Switzerland)2022
The Graphene Structure's Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Low-Temperature Direct PECVD Synthesis of Graphene on Si(100) with Increased Methane Flow: Structure and Photoelectric Properties.Micromachines · 2026Article
- Advancing Graphene Synthesis: Low-Temperature Growth and Hydrogenation Mechanisms Using Plasma-Enhanced Chemical Vapor Deposition.Molecules (Basel, Switzerland) · 2024Article
- Influence of Synthesis Parameters on Structure and Characteristics of the Graphene Grown Using PECVD on Sapphire Substrate.Nanomaterials (Basel, Switzerland) · 2024Article
- Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2.Nanomaterials (Basel, Switzerland) · 2023Article
- Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation.Nanomaterials (Basel, Switzerland) · 2022Article
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5 authors.
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Abstract
Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current-voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO
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