Evidence map›Paper›PMID 35630191›Full record

ReviewMicromachines2022

Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications.

Haider Abbas, Jiayi Li, Diing Shenp Ang

Abstract readReview
In one paragraph

Review in Micromachines, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.

0numbers the graph read from it
0cells of the map it votes in
7citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

7 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Thin film ferroelectric photonic-electronic memory.Light, science & applications · 2024
    Article
  5. Article
  6. Article
  7. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Haider AbbasSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.ORCID 0000-0003-4372-2639
Jiayi LiSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
Diing Shenp AngSchool of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.

Funding

Ministry of Education MOE-T2EP50120-0003
6 · The paper itself

Abstract

Due to a rapid increase in the amount of data, there is a huge demand for the development of new memory technologies as well as emerging computing systems for high-density memory storage and efficient computing. As the conventional transistor-based storage devices and computing systems are approaching their scaling and technical limits, extensive research on emerging technologies is becoming more and more important. Among other emerging technologies, CBRAM offers excellent opportunities for future memory and neuromorphic computing applications. The principles of the CBRAM are explored in depth in this review, including the materials and issues associated with various materials, as well as the basic switching mechanisms. Furthermore, the opportunities that CBRAMs provide for memory and brain-inspired neuromorphic computing applications, as well as the challenges that CBRAMs confront in those applications, are thoroughly discussed. The emulation of biological synapses and neurons using CBRAM devices fabricated with various switching materials and device engineering and material innovation approaches are examined in depth.

Indexed as

artificial neuronsartificial synapsesCBRAMemerging memory technologiesmemristorneuromorphic computingRRAM

Identifiers

PMID35630191
PMCPMC9143014

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.