Evidence map›Paper›PMID 35629537›Full record

ArticleMaterials (Basel, Switzerland)2022

A Comparative Study on p- and n-Type Silicon Heterojunction Solar Cells by AFORS-HET.

Wabel Mohammed Alkharasani, Nowshad Amin, Seyed Ahmad Shahahmadi, Ammar Ahmed Alkahtani, Ili Salwani Binti Mohamad, Puvaneswaran Chelvanathan, Tiong Sieh Kiong

Abstract read
In one paragraph

Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. A Review of Simulation Tools for Thin-Film Solar Cells.Materials (Basel, Switzerland) · 2024
    Review
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Wabel Mohammed AlkharasaniInstitute of Sustainable Energy (ISE), Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Malaysia.
Nowshad AminInstitute of Sustainable Energy (ISE), Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Malaysia.ORCID 0000-0002-3250-1307
Seyed Ahmad ShahahmadiEngineered Nanosystems Group, School of Science, Aalto University, 00076 Aalto, Finland.ORCID 0000-0002-8320-1793
Ammar Ahmed AlkahtaniInstitute of Sustainable Energy (ISE), Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Malaysia.ORCID 0000-0003-2067-9519
Ili Salwani Binti MohamadInstitute of Sustainable Energy (ISE), Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Malaysia.
Puvaneswaran ChelvanathanSolar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia.
Tiong Sieh KiongInstitute of Sustainable Energy (ISE), Universiti Tenaga Nasional, Jalan IKRAM-UNITEN, Kajang 43000, Malaysia.

Funding

Ministry of Higher Education of Malaysia FRGS/1/2018/STG07/UNITEN/01/2
6 · The paper itself

Abstract

Despite the increasing trend of n-type silicon wafer utilization in the manufacturing of high-efficiency heterojunction solar cells due to the superior advantages over p-type counterparts, its high manufacturing cost remains to be one of the most crucial factors, which impedes its market share growth with state-of-the-art silicon heterojunction (SHJ) solar cells demonstrating high conversion efficiencies from various configurations, the prospect of using an n-type wafer is debatable from a cost-efficiency point of view. Hence, a systematic comparison between p- and n-type SHJ solar cells was executed in this work using AFORS-HET numerical software. Front and rear-emitter architectures were selected for each type of wafer with ideal (without defects) and non-ideal (with defects) conditions. For ideal conditions, solar cells with p-type wafers and a front-emitter structure resulted in a maximum conversion efficiency of 28%, while n-type wafers demonstrated a maximum efficiency of 26% from the rear-emitter structure. These high-performance devices were possible due to the optimization of the bandgap and electron-affinity for all passivating and doping layers with values ranging from 1.3 to 1.7 eV and 3.9 to 4 eV, respectively. The correlation between the device structure and the type of wafers as demonstrated here will be helpful for the development of both types of solar cells with comparable performance.

Indexed as

AFORS-HETcrystalline silicon solar cellsheterojunctionn- and p-types wafersrear and front-emitterssimulation

Identifiers

PMID35629537
PMCPMC9142932

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.