ArticleMaterials (Basel, Switzerland)2022
Numerical Study of Fabrication-Related Effects of the Structural-Profile on the Performance of a Dielectric Photonic Crystal-Based Fluid Sensor.
Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed, 14 citations in OpenAlex.
- Dispersion Engineering and Sensitivity Enhancement in Photonic Crystal Waveguide Sensors: Current Advances and Emerging Challenges.Sensors (Basel, Switzerland) · 2026Review
- Three-Dimensional Modeling of the Optical Switch Based on Guided-Mode Resonances in Photonic Crystals.Micromachines · 2023Article
- A Review on Photonic Sensing Technologies: Status and Outlook.Biosensors · 2023Review
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Authors and funding
4 authors at 3 institutions in 4 countries.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this work, fabrication of a dielectric photonic crystal device and numerical study of its spectral characteristics as a refractive index sensor are presented for near infrared range. The proposed nanosensor device is composed of low-cost dielectric materials, i.e., silicon dioxide and niobium pentoxide, and is fabricated using focused ion-beam milling lithography. In the first part, the fabrication process of the device is discussed, along with the process parameters and their effects on the structural properties of the resulting photonic crystal elements. In the second part, the device is numerically tested as a sensor for the biological refractive index range of 1.33 to 1.4. The performance considerations of the biosensor device are studied for 12 different structural profiles based on the fabrication results. It is shown that the angular-wall-profile of the fabricated structures downgrades the performance of the sensor, and the optimum value of hole depth should be in the range of 930-1500 nm to get the best performance. A sensitivity of 185.117 nm/RIU and a figure of merit of 9.7 were recorded for the optimum design of the device; however, a maximum sensitivity of 296.183 nm/RIU and a figure-of-merit of 13.184 RIU
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