ArticleACS nano2022
Directly Visualizing Photoinduced Renormalized Momentum-Forbidden Electronic Quantum States in an Atomically Thin Semiconductor.
Article in ACS nano, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
5 citing papers in PubMed.
- Electrostatically tunable moiré-mediated Wigner states via interfacial potential engineering in 2D van der Waals heterostructures.Nature communications · 2026Article
- Single Sublayer Reconstruction in Substrate-Supported WSACS nano · 2025Article
- Direct Visualization of Metal-Induced Gap State Distribution and Valley Band Evolution at Metal Versus Semimetal MoSACS nano · 2025Article
- Strongly Enhanced Electronic Bandstructure Renormalization by Light in Nanoscale Strained Regions of Monolayer MoSACS nano · 2024Article
- Article
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Resolving the momentum degree of freedom of photoexcited charge carriers and exploring the excited-state physics in the hexagonal Brillouin zone of atomically thin semiconductors have recently attracted great interest for optoelectronic technologies. We demonstrate a combination of light-modulated scanning tunneling microscopy and the quasiparticle interference (QPI) technique to offer a directly accessible approach to reveal and quantify the unexplored momentum-forbidden electronic quantum states in transition metal dichalcogenide (TMD) monolayers. Our QPI results affirm the large spin-splitting energy at the spin-valley-coupled Q valleys in the conduction band (CB) of a tungsten disulfide monolayer. Furthermore, we also quantify the photoexcited carrier density-dependent band renormalization at the Q valleys. Our findings directly highlight the importance of the excited-state distribution at the Q valley in the band renormalization in TMDs and support the critical role of the CB Q valley in engineering the quantum electronic valley degree of freedom in TMD devices.
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