ArticleLight, science & applications2022
An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures.
Article in Light, science & applications, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Imaging of Recombination Rates and Lifetime in Perovskite Thin Film Processing.Small methods · 2025Article
- A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework.Small (Weinheim an der Bergstrasse, Germany) · 2023Article
- GaSb band-structure models for electron density determinations from Raman measurements.Journal of applied physics · 2023Article
- Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe.Scientific reports · 2022Article
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Authors and funding
7 authors.
Funding
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Abstract
We demonstrate an all optical approach that can surprisingly offer the possibility of yielding much more information than one would expect, pertinent to the carrier recombination dynamics via both radiative and nonradiative processes when only one dominant deep defect level is present in a semiconductor material. By applying a band-defect state coupling model that explicitly treats the inter-band radiative recombination and Shockley-Read-Hall (SRH) recombination via the deep defect states on an equal footing for any defect center occupation fraction, and analyzing photoluminescence (PL) as a function of excitation density over a wide range of the excitation density (e.g., 5-6 orders in magnitude), in conjunction with Raman measurements of the LO-phonon plasmon (LOPP) coupled mode, nearly all of the key parameters relevant to the recombination processes can be obtained. They include internal quantum efficiency (IQE), minority and majority carrier density, inter-band radiative recombination rate (W
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