Evidence map›Paper›PMID 35517741›Full record

ArticleRSC advances2020

Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors.

Hong Li, Jiakun Liang, Peipei Xu, Jing Luo, Fengbin Liu

Open access · goldAbstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in RSC advances, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
0.7field-weighted citation impact, top 35% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed, 12 citations in OpenAlex.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors at 2 institutions in 2 countries.

Hong LiCollege of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China lihong@ncut.edu.cn.ORCID https://orcid.org/0000-0003-3737-0833
Jiakun LiangCollege of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China lihong@ncut.edu.cn.
Peipei XuCollege of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China lihong@ncut.edu.cn.
Jing LuoBeijing Research Institute of Automation for Machinery Industry Beijing 100120 P. R. China.
Fengbin LiuCollege of Mechanical and Material Engineering, North China University of Technology Beijing 100144 P. R. China lihong@ncut.edu.cn.
North China University of Technology · CNBeijing Research Institute of Automation for Machinery Industry (China) · CN

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The two-dimensional (2D) vertical van der Waals (vdW) stacked homojunction is an advantageous configuration for fast low-power tunneling field effect transistors (TFETs). We simulate the device performance of the sub-10 nm vertical SnSe homojunction TFETs with

Identifiers

PMID35517741
PMCPMC9054299
OpenAlexW3033304056

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.