Evidence map›Paper›PMID 35497168›Full record

ArticleRSC advances2020

Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone.

Hongyan Zhang, Xiaofeng Zhao, Jiahe Huang, Ju Bai, Yanjun Hou, Cheng Wang, Shuhong Wang, Xuduo Bai

Abstract read
In one paragraph

Article in RSC advances, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Hongyan ZhangSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.
Xiaofeng ZhaoSchool of Electronic Engineering, Heilongjiang University Harbin 150080 P. R. China.
Jiahe HuangSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.
Ju BaiSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.
Yanjun HouSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.
Cheng WangSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.ORCID https://orcid.org/0000-0002-6063-9741
Shuhong WangSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.ORCID https://orcid.org/0000-0001-6545-0940
Xuduo BaiSchool of Chemical Engineering and Materials, Heilongjiang University Harbin 150080 P. R. China openair@163.com wangc_93@163.com.ORCID https://orcid.org/0000-0002-9728-6070

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein,

Identifiers

PMID35497168
PMCPMC9051947

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.