Evidence map›Paper›PMID 35467342›Full record

ArticleThe journal of physical chemistry letters2022

Unusual Deformation and Fracture in Gallium Telluride Multilayers.

Yan Zhou, Shi Zhou, Penghua Ying, Qinghua Zhao, Yong Xie, Mingming Gong, Pisu Jiang, Hui Cai, Bin Chen, Sefaattin Tongay and 6 more

Abstract read
In one paragraph

Article in The journal of physical chemistry letters, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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3 · Its place in the literature

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0 citing papers in PubMed.

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4 · The record

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5 · Who and what money

Authors and funding

16 authors.

Yan ZhouState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0001-6470-6991
Shi ZhouUniversity of Science and Technology of China, Hefei 230026, China.
Penghua YingSchool of Science, Harbin Institute of Technology, Shenzhen 518055, China.
Qinghua ZhaoState Key Laboratory of Solidification Processing, School of Materials Science, Northwestern Polytechnical University, Xi'an, 710072, China.
Yong XieSchool of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an, 710071, China.
Mingming GongState Key Laboratory of Solidification Processing, School of Materials Science, Northwestern Polytechnical University, Xi'an, 710072, China.
Pisu JiangCenter for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.
Hui CaiSchool for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ85287, United States.
Bin ChenSchool for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ85287, United States.
Sefaattin TongaySchool for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, AZ85287, United States.ORCID 0000-0001-8294-984X
Jin ZhangSchool of Science, Harbin Institute of Technology, Shenzhen 518055, China.
Wanqi JieState Key Laboratory of Solidification Processing, School of Materials Science, Northwestern Polytechnical University, Xi'an, 710072, China.
Tao WangState Key Laboratory of Solidification Processing, School of Materials Science, Northwestern Polytechnical University, Xi'an, 710072, China.ORCID 0000-0003-3271-3331
Pingheng TanState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.ORCID 0000-0001-6575-1516
Dong LiuCenter for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.ORCID 0000-0002-5947-8362
Martin KuballCenter for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, U.K.ORCID 0000-0003-3070-1070

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The deformation and fracture mechanism of two-dimensional (2D) materials are still unclear and not thoroughly investigated. Given this, mechanical properties and mechanisms are explored on example of gallium telluride (GaTe), a promising 2D semiconductor with an ultrahigh photoresponsivity and a high flexibility. Hereby, the mechanical properties of both substrate-supported and suspended GaTe multilayers were investigated through Berkovich-tip nanoindentation instead of the commonly used AFM-based nanoindentation method. An unusual concurrence of multiple pop-in and load-drop events in loading curve was observed. Theoretical calculations unveiled this concurrence originating from the interlayer-sliding mediated layers-by-layers fracture mechanism in GaTe multilayers. The van der Waals force dominated interlayer interactions between GaTe and substrates was revealed much stronger than that between GaTe interlayers, resulting in the easy sliding and fracture of multilayers within GaTe. This work introduces new insights into the deformation and fracture of GaTe and other 2D materials in flexible electronics applications.

Identifiers

PMID35467342
PMCPMC9082608

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.