ArticleNano-micro letters2022
Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility.
Article in Nano-micro letters, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 16 papers.
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Who cites it
16 citing papers in PubMed.
- Elemental Tellurium Nanostructures: Controlled Synthesis and Emerging Applications in Photodetection, Electrocatalysis, and Photocatalysis.Small (Weinheim an der Bergstrasse, Germany) · 2026Review
- Recent Advances in the Synthesis and Application of Tellurium Semiconductors.Nanomaterials (Basel, Switzerland) · 2026Review
- Synergistic Pyroelectric-Bolometric Coupling in Tellurene Nanowire for Energy-Efficient Artificial Vision.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Phase-Coherent Transport in Two-Dimensional Tellurium Flakes.ACS applied electronic materials · 2026Article
- Recent Advances in Xenes Based FET for Biosensing Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- Controllable growth of wafer-lever MoSRSC advances · 2025Article
- Physical Vapor Deposition of High-Mobility P-Type Tellurium and Its Applications for Gate-Tunable van der Waals PN Photodiodes.ACS applied materials & interfaces · 2025Article
- Article
- Crystal Face-Dependent Behavior of Single-Atom Pt: Construct of SA-FLP Dual Active Sites for Efficient NOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSeAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Progress in Electronic, Energy, Biomedical and Environmental Applications of Boron Nitride and MoSMicromachines · 2024Review
- Progress in the Synthesis and Application of Tellurium Nanomaterials.Nanomaterials (Basel, Switzerland) · 2023Review
- Article
- AlNano-micro letters · 2022Article
- Fabrication and characterization of ZnO/SeFrontiers of optoelectronics · 2022Article
- Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors.Frontiers in chemistry · 2022Article
Corrections and comments
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Authors and funding
15 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm
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