ArticleNanomaterials (Basel, Switzerland)2022
Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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3 citing papers in PubMed.
- Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor.Micromachines · 2024Article
- CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor.Nature communications · 2023Article
- Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.Nanomaterials (Basel, Switzerland) · 2022Article
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Authors and funding
6 authors.
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Abstract
Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/ITO heterojunction TFTs, and explored the effects of channel structures on the hump characteristics of ZnO/ITO TFTs. We found that V
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