ArticleThe journal of physical chemistry. C, Nanomaterials and interfaces2022
Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors.
Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Precursor Design Principles for Area-Selective Atomic Layer Deposition of Alumina: Quantifying the Role of Lewis Acidity, Steric Repulsion, and Dimerization in Surface Adsorption.Journal of computational chemistry · 2026Article
- Backbone-Length-Optimized Inhibitors Deliver Long-Retention Selectivity in Area-Selective ALD of VOAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Article
- Area-Selective Atomic Layer Deposition on Homogeneous Substrate for Next-Generation Electronic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Selective metal passivation by vapor-dosed phosphonic acid inhibitors for area-selective atomic layer deposition of SiONano convergence · 2025Article
- Gas- versus Liquid-Phase Silylation as a Way to Inhibit Thin-Film Atomic Layer Deposition (ALD) on Silicon Oxide Substrates.The journal of physical chemistry. C, Nanomaterials and interfaces · 2025Article
- Investigating Benzoic Acid Derivatives as Potential Atomic Layer Deposition Inhibitors Using Nanoscale Infrared Spectroscopy.Nanomaterials (Basel, Switzerland) · 2025Article
- The Consequences of Random Sequential Adsorption for the Precursor Packing and Growth-Per-Cycle of Atomic Layer Deposition Processes.The journal of physical chemistry letters · 2024Article
- Self-aligned patterning of tantalum oxide on Cu/SiONature communications · 2023Article
- Computational Investigation of Precursor Blocking during Area-Selective Atomic Layer Deposition Using Aniline as a Small-Molecule Inhibitor.Langmuir : the ACS journal of surfaces and colloids · 2023Article
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Authors and funding
10 authors.
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Abstract
Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication by area-selective ALD. When SMIs are used, it can be challenging to completely block precursor adsorption due to the inhibitor size and the relatively short vapor/phase exposures. Two strategies for precursor blocking are explored: (i) physically covering precursor adsorption sites, i.e., steric shielding, and (ii) eliminating precursor adsorption sites from the surface, i.e., chemical passivation. In this work, it is determined whether steric shielding is enough for effective precursor blocking during area-selective ALD or whether chemical passivation is required as well. At the same time, we address why some ALD precursors are more difficult to block than others. To this end, the blocking of the Al precursor molecules trimethylaluminum (TMA), dimethylaluminum isopropoxide (DMAI), and tris(dimethylamino)aluminum (TDMAA) was studied by using acetylacetone (Hacac) as inhibitor. It was found that DMAI and TDMAA are more easily blocked than TMA because they adsorb on the same surface sites as Hacac, while TMA is also reactive with other surface sites. This work shows that chemical passivation plays a crucial role for precursor blocking in concert with steric shielding. Moreover, the reactivity of the precursor with the surface groups on the non-growth area dictates the effectiveness of blocking precursor adsorption.
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