ArticleMaterials (Basel, Switzerland)2022
Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric.
Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Studies of Raman-Scattered Technology on S-Shaped Dinaphtho[2,1-b:2',1'-f]thieno[3,2-b]thiophene-10 (S-DNTT-10).Materials (Basel, Switzerland) · 2025Article
- Modeling of Reactive Sputtering-History and Development.Materials (Basel, Switzerland) · 2023Review
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Abstract
When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti content in the NdTiON is varied by co-sputtering a Ti target at 0 W, 10 W, 20 W and 30 W, respectively, while fixing the sputtering power of an Nd target at 45 W. High-performance OTFT is obtained for the 20 W-sputtered Ti, including a small threshold voltage of -0.71 V and high carrier mobility of 1.70 cm
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