Memristive FG-PVA Structures Fabricated with the Use of High Energy Xe Ion Irradiation.

Artem I Ivanov, Irina V Antonova, Nadezhda A Nebogatikova, Andrzej Olejniczak

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Advances and Perspectives in Graphene-Based Quantum Dots Enabled Neuromorphic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026
Review

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Artem I IvanovRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia.ORCID 0000-0001-8977-3832

Irina V AntonovaRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia.ORCID 0000-0002-6835-2737

Nadezhda A NebogatikovaRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia.ORCID 0000-0002-5917-9709

Andrzej OlejniczakFaculty of Chemistry, Nicolaus Copernicus University, 87-100 Torun, Poland.

Funding

Russian Science Foundation 19-72-10046

6 · The paper itself

Abstract

A new approach based on the irradiation by heavy high energy ions (Xe ions with 26 and 167 MeV) was used for the creation of graphene quantum dots in the fluorinated matrix and the formation of the memristors in double-layer structures consisting of fluorinated graphene (FG) on polyvinyl alcohol (PVA). As a result, memristive switchings with an ON/OFF current relation ~2-4 orders of magnitude were observed in 2D printed crossbar structures with the active layer consisting of dielectric FG films on PVA after ion irradiation. All used ion energies and fluences (3 × 10

Indexed as

FG–PVA active layerflexible memristorsfluorinated graphenegraphene quantum dotshigh energy ion irradiationpulse measurementsswitching parameters

Identifiers

PMID35329539

DOI10.3390/ma15062085

PMCPMC8950800

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.