ReviewScience and technology of advanced materials2022
Recent advances in two-dimensional ferromagnetism: strain-, doping-, structural- and electric field-engineering toward spintronic applications.
Review in Science and technology of advanced materials, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed.
- Machine-learning-based architecting of magnetoresistance phase diagrams in anomalous Hall systems.National science review · 2026Article
- Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms.Nanoscale advances · 2024Article
- Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2023Review
- Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study.Nanomaterials (Basel, Switzerland) · 2022Article
Corrections and comments
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Since the first report on truly two-dimensional (2D) magnetic materials in 2017, a wide variety of merging 2D magnetic materials with unusual physical characteristics have been discovered and thus provide an effective platform for exploring the associated novel 2D spintronic devices, which have been made significant progress in both theoretical and experimental studies. Herein, we make a comprehensive review on the recent scientific endeavors and advances on the various engineering strategies on 2D ferromagnets, such as strain-, doping-, structural- and electric field-engineering, toward practical spintronic applications, including spin tunneling junctions, spin field-effect transistors and spin logic gate, etc. In the last, we discuss on current challenges and future opportunities in this field, which may provide useful guidelines for scientists who are exploring the fundamental physical properties and practical spintronic devices of low-dimensional magnets.
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Registered trials
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