Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications.

Yuang-Tung Cheng, Tsung-Lin Lu, Shang-Husuan Wang, Jyh-Jier Ho, Chung-Cheng Chang, Chau-Chang Chou, Jiashow Ho

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Article in Sensors (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

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1citing papers in PubMed

–field-weighted citation impact

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3 · Its place in the literature

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1 citing paper in PubMed.

Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure.Sensors (Basel, Switzerland) · 2022
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5 · Who and what money

Authors and funding

7 authors.

Yuang-Tung ChengDepartment of Electrical Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.ORCID 0000-0001-8872-465X

Tsung-Lin LuDepartment of Electrical Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.ORCID 0000-0003-4837-1073

Shang-Husuan WangDepartment of Electrical Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.

Jyh-Jier HoDepartment of Electrical Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.ORCID 0000-0002-5117-8402

Chung-Cheng ChangDepartment of Electrical Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.

Chau-Chang ChouDepartment of Mechanical & Mechatronic Engineering, National Taiwan Ocean University, No.2, Pei-Ning Rd., Keelung 202, Taiwan.ORCID 0000-0003-1038-0628

Jiashow HoDepartment of Electrical Engineering, University of California, Los Angeles, CA 90095, USA.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-μW/cm

Indexed as

avalanche multiplication factorlow pressure chemical vapor deposition (LPCVD) systempoly-silicon germanium (poly-SiGe)quantum efficiencyresponsivity

Identifiers

PMID35161989

DOI10.3390/s22031243

PMCPMC8839498

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