ArticleNanomaterials (Basel, Switzerland)2022
Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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9 citing papers in PubMed.
- Quantum Simulation Study of Ultrascaled Label-Free DNA Sensors Based on Sub-10 nm Dielectric-Modulated TMD FETs: Sensitivity Enhancement Through Downscaling.Micromachines · 2025Article
- Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoSMicromachines · 2024Article
- New Label-Free DNA Nanosensor Based on Top-Gated Metal-Ferroelectric-Metal Graphene Nanoribbon on Insulator Field-Effect Transistor: A Quantum Simulation Study.Nanomaterials (Basel, Switzerland) · 2024Article
- WSSensors (Basel, Switzerland) · 2024Article
- Performance Projection of Vacuum Gate Dielectric Doping-Free Carbon Nanoribbon/Nanotube Field-Effect Transistors for Radiation-Immune Nanoelectronics.Nanomaterials (Basel, Switzerland) · 2024Article
- Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection.Nanomaterials (Basel, Switzerland) · 2024Article
- Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor.Micromachines · 2023Article
- Electronic Nanodevices.Nanomaterials (Basel, Switzerland) · 2022Article
- Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison.Nanomaterials (Basel, Switzerland) · 2022Article
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5 authors.
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Abstract
The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. The computational investigation is conducted via a quantum simulation approach, which solves self-consistently the Poisson equation and the non-equilibrium Green's function (NEGF) formalism in the ballistic limit. The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. The obtained improvements include the on-current, off-current, ambipolar behavior, leakage current, I
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