ArticleNanomaterials (Basel, Switzerland)2022
Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures.
Article in Nanomaterials (Basel, Switzerland), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
4 citing papers in PubMed.
- Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication.Nanomaterials (Basel, Switzerland) · 2024Article
- Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications.Nanomaterials (Basel, Switzerland) · 2023Article
- Effect of carbon on the co-presence of metallic tungsten as a nucleation agent and EuRSC advances · 2022Article
- Flexible Transient Resistive Memory Based on Biodegradable Composites.Nanomaterials (Basel, Switzerland) · 2022Article
Corrections and comments
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Authors and funding
7 authors.
Funding
Abstract
This article presents the results of experimental studies of the impact of electrode material and the effect of nanoscale film thickness on the resistive switching in forming-free nanocrystalline ZnO films grown by pulsed laser deposition. It was demonstrated that the nanocrystalline ZnO film with TiN, Pt, ZnO:In, and ZnO:Pd bottom electrodes exhibits a nonlinear bipolar effect of forming-free resistive switching. The sample with Pt showed the highest resistance values
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Registered trials
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