Evidence map›Paper›PMID 35092351›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2022

Highly Stretchable High-Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates.

Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen and 1 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.

0numbers the graph read from it
0cells of the map it votes in
9citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

9 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Xiaopan SongNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Ting ZhangNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Lei WuNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Ruijin HuNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Wentao QianNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Zongguang LiuNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Junzhuan WangNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Yi ShiNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Jun XuNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Kunji ChenNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
Linwei YuNational Laboratory of Solid-State Microstructures, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.ORCID 0000-0002-0801-5210

Funding

National Key R&D Program of China 2018YFB2200101National Key Research Program of China 92164201National Natural Science Foundation of China 11874198National Natural Science Foundation of China 61921005National Natural Science Foundation of China 61974064National Natural Science Foundation of China 62104100
6 · The paper itself

Abstract

Quasi-1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large-area elastomers are advantageous candidates for developing various high-performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an in-plane solid-liquid-solid (IPSLS) mechanism, and reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers. Within an optimized discrete FETs-on-islands architecture, the SiNW-FETs can sustain large stretching strains up to 50% and repetitive testing for more than 1000 cycles (under 20% strain), while achieving a high hole carrier mobility, I

Indexed as

NanowiresElastomersElectronicsSiliconTransistors, ElectronicElastomersSiliconelastomersfield effect transistorsilicon nanowire integrationstretchable electronics

Identifiers

PMID35092351
PMCPMC8948590

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.