ArticleAngewandte Chemie (International ed. in English)2022
Plasma-Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films.
Article in Angewandte Chemie (International ed. in English), 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Aerogels Part 2. A Focus on the Less Patented and Marketed Airy Inorganic Networks Despite the Plethora of Possible Advanced Applications.International journal of molecular sciences · 2025Review
- Selective Design of Mesoporous BiSmall (Weinheim an der Bergstrasse, Germany) · 2025Article
- Plasma-Induced Oxygen Defect Engineering in Perovskite Oxide for Boosting Oxygen Evolution Reaction.Small (Weinheim an der Bergstrasse, Germany) · 2024Article
- Plasma-Induced Nanocrystalline Domain Engineering and Surface Passivation in Mesoporous Chalcogenide Semiconductor Thin Films.Angewandte Chemie (International ed. in English) · 2022Article
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Authors and funding
10 authors.
Funding
Abstract
The synthesis of highly crystalline mesoporous materials is key to realizing high-performance chemical and biological sensors and optoelectronics. However, minimizing surface oxidation and enhancing the domain size without affecting the porous nanoarchitecture are daunting challenges. Herein, we report a hybrid technique that combines bottom-up electrochemical growth with top-down plasma treatment to produce mesoporous semiconductors with large crystalline domain sizes and excellent surface passivation. By passivating unsaturated bonds without incorporating any chemical or physical layers, these films show better stability and enhancement in the optoelectronic properties of mesoporous copper telluride (CuTe) with different pore diameters. These results provide exciting opportunities for the development of long-term, stable, and high-performance mesoporous semiconductor materials for future technologies.
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Registered trials
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