ArticleScientific reports2022
Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics.
Article in Scientific reports, 2022. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Optimization strategy of the emerging memristors: From material preparation to device applications.iScience · 2024Review
- Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device.Materials (Basel, Switzerland) · 2024Article
- Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiOMaterials (Basel, Switzerland) · 2023Article
- Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.Micromachines · 2023Article
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Authors and funding
7 authors.
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Abstract
The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc oxide) memristors were investigated for synapse application. The use of the oxide bi-layer memristors, in particular, improved electrical properties such as stability, memristor reliability, and an increase in synaptic weight states. The set voltage of bi-layer IGZO/ZnO memristors was 0.9 V, and the reset voltage was around - 0.7 V, resulting in a low-operating voltage for neuromorphic systems. The oxygen vacancies in the X-ray photoelectron spectroscopy analysis played a role in the modulation of the high-resistance state (HRS) (oxygen-deficient) and the low-resistance state (oxygen-rich) region. The V
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