ArticleNanomaterials (Basel, Switzerland)2021
Structural and Parametric Identification of Knowm Memristors.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
7 citing papers in PubMed.
- Influence of the Ge-Chalcogenide Active Layer on Electrical Conduction in Self-Directed Channel Memristors.Micromachines · 2026Article
- Analysis of a Novel Amplitude-Controlled Memristive Hyperchaotic Map and Its Utilization in Image Encryption.Sensors (Basel, Switzerland) · 2025Article
- A Fully Integrated Memristive Chaotic Circuit Based on Memristor Emulator with Voltage-Controlled Oscillator.Micromachines · 2025Article
- A Compact Memristor Model Based on Physics-Informed Neural Networks.Micromachines · 2024Article
- Resistance Tracking Control of Memristors Based on Iterative Learning.Entropy (Basel, Switzerland) · 2023Article
- Electromagnetic Interference Effects of Continuous Waves on Memristors: A Simulation Study.Sensors (Basel, Switzerland) · 2022Article
- SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices.Micromachines · 2022Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
4 authors.
Funding
Abstract
This paper proposes a novel identification method for memristive devices using Knowm memristors as an example. The suggested identification method is presented as a generalized process for a wide range of memristive elements. An experimental setup was created to obtain a set of intrinsic I-V curves for Knowm memristors. Using the acquired measurements data and proposed identification technique, we developed a new mathematical model that considers low-current effects and cycle-to-cycle variability. The process of parametric identification for the proposed model is described. The obtained memristor model represents the switching threshold as a function of the state variables vector, making it possible to account for snapforward or snapback effects, frequency properties, and switching variability. Several tools for the visual presentation of the identification results are considered, and some limitations of the proposed model are discussed.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.