ArticleNanomaterials (Basel, Switzerland)2021
Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- Efficient Large-Area Graphene p-n Junction Terahertz Receivers on an Integrated Optical Platform.Small methods · 2025Article
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Authors and funding
5 authors.
Funding
Abstract
Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1-10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process and quality control. Here, we exploited InAs nanowires (NWs) to engineer antenna-coupled THz photodetectors that operated as efficient bolometers or photo thermoelectric receivers at room temperature. We controlled the core detection mechanism by design, through the different architectures of an on-chip resonant antenna, or dynamically, by varying the NW carrier density through electrostatic gating. Noise equivalent powers as low as 670 pWHz
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Registered trials
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