ArticleMicromachines2021
Multiphoton Absorption Simulation of Sapphire Substrate under the Action of Femtosecond Laser for Larger Density of Pattern-Related Process Windows.
Article in Micromachines, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed.
- A Review of Femtosecond Laser Processing for Sapphire.Materials (Basel, Switzerland) · 2026Review
- Ultra-Short Pulses Laser Heating of Dielectrics: A Semi-Classical Analytical Model.Materials (Basel, Switzerland) · 2024Article
- Femtosecond Laser-Based Micromachining of Rotational-Symmetric Sapphire Workpieces.Materials (Basel, Switzerland) · 2022Article
- High-Efficiency Copper Removal by Nitrogen Plasma-Assisted Picosecond Laser Processing.Micromachines · 2022Article
- The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser.Micromachines · 2022Article
- Control of the Longitudinal Compression and Transverse Focus of Ultrafast Electron Beam for Detecting the Transient Evolution of Materials.Materials (Basel, Switzerland) · 2022Article
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7 authors.
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Abstract
It is essential to develop pattern-related process windows on substrate surface for reducing the dislocation density of wide bandgap semiconductor film growth. For extremely high instantaneous intensity and excellent photon absorption rate, femtosecond lasers are currently being increasingly adopted. However, the mechanism of the femtosecond laser developing pattern-related process windows on the substrate remains to be further revealed. In this paper, a model is established based on the Fokker-Planck equation and the two-temperature model (TTM) equation to simulate the ablation of a sapphire substrate under the action of a femtosecond laser. The transient nonlinear evolutions such as free electron density, absorption coefficient, and electron-lattice temperature are obtained. This paper focuses on simulating the multiphoton absorption of sapphire under femtosecond lasers of different wavelengths. The results show that within the range of 400 to 1030 nm, when the wavelength is large, the number of multiphoton required for ionization is larger, and wider and shallower ablation pits can be obtained. When the wavelength is smaller, the number of multiphoton is smaller, narrower and deeper ablation pits can be obtained. Under the simulation conditions presented in this paper, the minimum ablation pit depth can reach 0.11 μm and the minimum radius can reach 0.6 μm. In the range of 400 to 1030 nm, selecting a laser with a shorter wavelength can achieve pattern-related process windows with a smaller diameter, which is beneficial to increase the density of pattern-related process windows on the substrate surface. The simulation is consistent with existing theories and experimental results, and further reveals the transient nonlinear mechanism of the femtosecond laser developing the pattern-related process windows on the sapphire substrate.
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