FEM Analysis of Various Multilayer Structures for CMOS Compatible Wearable Acousto-Optic Devices.

Mehwish Hanif, Varun Jeoti, Mohamad Radzi Ahmad, Muhammad Zubair Aslam, Saima Qureshi, Goran Stojanovic

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Article in Sensors (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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6 authors.

Mehwish HanifDepartment of Electrical and Electronics Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia.

Varun JeotiFaculty of Technical Sciences, University of Novi Sad, Trg Dositeja Obradovica 6, 21000 Novi Sad, Serbia.

Mohamad Radzi AhmadDepartment of Electrical and Electronics Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia.ORCID 0000-0002-6073-8790

Muhammad Zubair AslamDepartment of Electrical and Electronics Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia.

Saima QureshiFaculty of Technical Sciences, University of Novi Sad, Trg Dositeja Obradovica 6, 21000 Novi Sad, Serbia.

Goran StojanovicFaculty of Technical Sciences, University of Novi Sad, Trg Dositeja Obradovica 6, 21000 Novi Sad, Serbia.ORCID 0000-0003-2098-189X

Funding

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6 · The paper itself

Abstract

Lately, wearable applications featuring photonic on-chip sensors are on the rise. Among many ways of controlling and/or modulating, the acousto-optic technique is seen to be a popular technique. This paper undertakes the study of different multilayer structures that can be fabricated for realizing an acousto-optic device, the objective being to obtain a high acousto-optic figure of merit (AOFM). By varying the thicknesses of the layers of these materials, several properties are discussed. The study shows that the multilayer thin film structure-based devices can give a high value of electromechanical coupling coefficient (

Indexed as

TransducersWearable Electronic DevicesEquipment DesignEquipment Failure AnalysisOptics and Photonicsacousto-opticAlNCOMSOLFEMfigure of meritLiNbO3multilayer structuresopticspiezoelectricSAWSiO2ZnO

Identifiers

PMID34883867

DOI10.3390/s21237863

PMCPMC8659981

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LicenceCC BY

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