Evidence map›Paper›PMID 34832709›Full record

ArticleMicromachines2021

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory.

Woo-Jin Jung, Jun-Young Park

Abstract read
In one paragraph

Article in Micromachines, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors.

Woo-Jin JungSchool of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Chungbuk, Cheongju 28644, Korea.
Jun-Young ParkSchool of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Chungbuk, Cheongju 28644, Korea.ORCID 0000-0003-4830-9739

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash memory, cell-to-cell interference stemming from parasitic capacitance between the word-lines (WLs) is difficult to control because the number of WLs, achieved for better packing density, have been dramatically increased under limited height of NAND string. In this context, finding a novel approach based on dielectric engineering seems timely and applicable. This paper covers the voltage interference characteristics in 3D NAND with respect to dielectrics, then proposes an alternative cell structure to suppress such interference.

Indexed as

cell-programmingdielectricsflash memoryinterferencevacuum dielectricV-NAND

Identifiers

PMID34832709
PMCPMC8619526

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.