Evidence map›Paper›PMID 34832350›Full record

ArticleMaterials (Basel, Switzerland)2021

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells.

Paweł Węgierek, Justyna Pastuszak

Open access · goldAbstract read
In one paragraph

Article in Materials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
0.6field-weighted citation impact, top 31% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 5 citations in OpenAlex.

  1. Review
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors at 1 institution in 1 country.

Paweł WęgierekFaculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38 A, 20-618 Lublin, Poland.ORCID 0000-0002-0812-3414
Justyna PastuszakFaculty of Electrical Engineering and Computer Science, Lublin University of Technology, Nadbystrzycka 38 A, 20-618 Lublin, Poland.ORCID 0000-0002-2527-3545
Lublin University of Technology · PL

Funding

Lublin University of Technology FD-20/EE-2/708
6 · The paper itself

Abstract

The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of

Indexed as

activation energydefectselectrical parameters of siliconintermediate band solar cellsion implantationphotovoltaic cells efficiency

Identifiers

PMID34832350
PMCPMC8619466
OpenAlexW3212720656

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.