Statistical Analysis of Uniform Switching Characteristics of Ta

Soeun Jin, Jung-Dae Kwon, Yonghun Kim

Open access · goldAbstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it

0cells of the map it votes in

2citing papers in PubMed

0.7field-weighted citation impact, top 30% of its field

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed, 8 citations in OpenAlex.

Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiOMaterials (Basel, Switzerland) · 2023
Article
Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices.Materials (Basel, Switzerland) · 2022
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors at 2 institutions in 1 country.

Soeun JinDepartment of Advanced Materials Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Korea.

Jung-Dae KwonDepartment of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Korea.

Yonghun KimDepartment of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon 51508, Korea.

Korea Institute of Materials Science · KRKorea University of Science and Technology · KR

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-dimensional (2D) materials are being widely studied for implementation in the development of new information-processing electronic devices. However, inherent drawbacks concerning operational uniformities, such as device-to-device variability, device yield, and reliability, are huge challenges in the realization of concrete memristor hardware devices. In this study, we fabricated Ta

Indexed as

AP-PECVDconductive bridge random-access memory (CBRAM)memristormolybdenum disulfide (MoS2)non-volatile resistive memory

Identifiers

PMID34771802

DOI10.3390/ma14216275

PMCPMC8584643

OpenAlexW3205545148

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.