ArticleSensors (Basel, Switzerland)2021
The X-ray Sensitivity of an Amorphous Lead Oxide Photoconductor.
Article in Sensors (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- A Novel Method to Model Image Creation Based on Mammographic Sensors Performance Parameters: A Theoretical Study.Sensors (Basel, Switzerland) · 2023Article
- Comparative Analysis of Multilayer Lead Oxide-Based X-ray Detector Prototypes.Sensors (Basel, Switzerland) · 2022Article
- Dark Current Modeling for a Polyimide-Amorphous Lead Oxide-Based Direct Conversion X-ray Detector.Sensors (Basel, Switzerland) · 2022Article
- Electrochemical paraquat sensor based on lead oxide nanoparticles.RSC advances · 2022Article
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Authors and funding
4 authors.
Funding
Abstract
The photoconductor layer is an important component of direct conversion flat panel X-ray imagers (FPXI); thus, it should be carefully selected to meet the requirements for the X-ray imaging detector, and its properties should be clearly understood to develop the most optimal detector design. Currently, amorphous selenium (a-Se) is the only photoconductor utilized in commercial direct conversion FPXIs for low-energy mammographic imaging, but it is not practically feasible for higher-energy diagnostic imaging. Amorphous lead oxide (a-PbO) photoconductor is considered as a replacement to a-Se in radiography, fluoroscopy, and tomosynthesis applications. In this work, we investigated the X-ray sensitivity of a-PbO, one of the most important parameters for X-ray photoconductors, and examined the underlying mechanisms responsible for charge generation and recombination. The X-ray sensitivity in terms of electron-hole pair creation energy,
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