ArticleNature communications2021
Current-induced manipulation of exchange bias in IrMn/NiFe bilayer structures.
Article in Nature communications, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
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Who cites it
10 citing papers in PubMed.
- Electrical control of exchange bias in sub-10 nm regime enabled by single-nanotube patterning.Nature communications · 2026Article
- Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPSNature materials · 2025Article
- MnAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors.Sensors (Basel, Switzerland) · 2025Article
- Spin-Orbit Torque Booster in an Antiferromagnet via Facilitating a Global Antiferromagnetic Order: A Route toward an Energy-Efficient Memory.ACS applied materials & interfaces · 2024Article
- Strain-Induced Robust Exchange Bias Effect in Epitaxial LaMolecules (Basel, Switzerland) · 2024Article
- Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain.Nature communications · 2024Article
- Coherent control of symmetry breaking in transverse-field Ising chains using few-cycle pulses.Nanophotonics (Berlin, Germany) · 2023Article
- Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets.Nature communications · 2023Article
- Antiferromagnetic spintronics: An overview and outlook.Fundamental research · 2022Review
Corrections and comments
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Authors and funding
10 authors.
Funding
Abstract
The electrical control of antiferromagnetic moments is a key technological goal of antiferromagnet-based spintronics, which promises favourable device characteristics such as ultrafast operation and high-density integration as compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments by electric current has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report current-induced manipulation of the exchange bias in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface which then rotate the antiferromagnetic moments. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.