ArticleNature communications2021
Stability and molecular pathways to the formation of spin defects in silicon carbide.
Article in Nature communications, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 10 papers.
What it found
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Who cites it
10 citing papers in PubMed.
- Evidence for Thermodynamically Stable "On-Top" Sulfur Divacancy in Monolayer WSACS nanoscience Au · 2026Article
- Atomistic characterization of the maturation mechanisms in the HIV-1 capsid domain.Nature communications · 2026Article
- Beyond Point-like Defects in Bulk Semiconductors: Junction Spectroscopy Techniques for Perovskite Solar Cells and 2D Materials.Nanomaterials (Basel, Switzerland) · 2026Review
- Surveying optically addressable spin qubits for quantum information and sensing technology.npj quantum materials · 2026Review
- Non-invasive bioinert room-temperature quantum sensor from silicon carbide qubits.Nature materials · 2025Article
- Robust single modified divacancy color centers in 4H-SiC under resonant excitation.Nature communications · 2024Article
- A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics.Nanomaterials (Basel, Switzerland) · 2024Review
- Engineering the formation of spin-defects from first principles.Nature communications · 2023Article
- The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium.Nature communications · 2023Article
- An epitaxial graphene platform for zero-energy edge state nanoelectronics.Nature communications · 2022Article
Corrections and comments
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Authors and funding
4 authors.
Funding
Abstract
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional theory calculations, we find that VV formation is a thermally activated process that competes with the conversion of silicon (V
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Registered trials
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