ArticleNano letters2021
Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires.
Article in Nano letters, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
5 citing papers in PubMed.
- Imaging of gate-controlled suppression of superconductivity via the Meissner effect.Nature communications · 2026Article
- Article
- Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch.Nature communications · 2024Article
- High-Performance Gate-Controlled Superconducting Switches: Large Output Voltage and Reproducibility.ACS nano · 2024Article
- Article
Corrections and comments
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Authors and funding
12 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying ≃±23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.
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Registered trials
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