A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor.

Qingzhi Meng, Qijing Lin, Feng Han, Weixuan Jing, Yangtao Wang, Zhuangde Jiang

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it

0cells of the map it votes in

2citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms.Nanomaterials (Basel, Switzerland) · 2023
Article
Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer.Micromachines · 2022
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Qingzhi MengState Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Qijing LinState Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Feng HanState Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Weixuan JingState Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Yangtao WangState Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Zhuangde JiangState Key Laboratory of Mechanical Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

Funding

China Postdoctoral Science Foundation No. 2018T111045National Natural Science Foundation of China No. 51805421, No. 51890884, No. 91748207

6 · The paper itself

Abstract

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz

Indexed as

double-channelhigh-electron-mobility transistornoise equivalent powerresponsivityterahertz detector

Identifiers

PMID34683785

DOI10.3390/ma14206193

PMCPMC8539176

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.