ArticleACS applied materials & interfaces2021
Heteroepitaxial Growth of High Optical Quality, Wafer-Scale van der Waals Heterostrucutres.
Article in ACS applied materials & interfaces, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Controlling Mixed Mo/MoSACS nano · 2026Article
- Alloying hBN with aluminum influences absorption and electronic properties.Scientific reports · 2025Article
- Large-Area Growth of High-Optical-Quality MoSeACS applied materials & interfaces · 2024Article
- Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes.Nano letters · 2024Article
- Macroscopic transition metal dichalcogenides monolayers with uniformly high optical quality.Nature communications · 2023Article
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Authors and funding
12 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers although only for materials of sufficient crystalline quality and so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow the growth of large-scale, high-quality TMD monolayers but also allow the growth to be performed directly on large-scale epitaxial hBN. In this work, we address this problem and demonstrate that MoSe
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