ArticleNanomaterials (Basel, Switzerland)2021
Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film.
Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge YNanomaterials (Basel, Switzerland) · 2024Article
- Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.Discover nano · 2023Review
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Authors and funding
5 authors.
Funding
Abstract
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 10
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