ReviewNanomaterials (Basel, Switzerland)2021
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays.
Review in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- InAs Nanowire-Based Twin Electrical Sensors Enabling Simultaneous Gas Detection.ACS applied nano materials · 2025Article
- Investigating Benzoic Acid Derivatives as Potential Atomic Layer Deposition Inhibitors Using Nanoscale Infrared Spectroscopy.Nanomaterials (Basel, Switzerland) · 2025Article
- Shape and Composition Evolution in an Alloy Core-Shell Nanowire Heterostructure Induced by Adatom Diffusion.Nanomaterials (Basel, Switzerland) · 2023Article
- Quasi-Freeform Metasurfaces for Wide-Angle Beam Deflecting and Splitting.Nanomaterials (Basel, Switzerland) · 2023Article
- Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires.Nanomaterials (Basel, Switzerland) · 2022Article
- Tailoring InSb Nanowires for High Thermoelectric Performance Using AAO Template-Assisted Die Casting Process.Nanomaterials (Basel, Switzerland) · 2022Article
- Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.Nanomaterials (Basel, Switzerland) · 2022Article
- Polarization-controlled anisotropy in hybrid plasmonic nanoparticles.Nanophotonics (Berlin, Germany) · 2022Article
- Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities.Micromachines · 2021Article
Corrections and comments
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Authors and funding
4 authors.
Funding
Abstract
Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.
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