Evidence map›Paper›PMID 34443844›Full record

ArticleNanomaterials (Basel, Switzerland)2021

High-Quality Single-Crystalline

Chandrasekar Sivakumar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin, Mon-Shu Ho

Abstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Review
  2. Elastic modulus of β-GaBeilstein journal of nanotechnology · 2024
    Article
  3. P-type Inversion at the Surface of β-GaSensors (Basel, Switzerland) · 2022
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Chandrasekar SivakumarDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.ORCID 0000-0002-5950-5543
Gang-Han TsaiInstitute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan.
Pei-Fang ChungDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.ORCID 0000-0002-0640-671X
Babu BalrajDepartment of Electrical Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan.ORCID 0000-0002-8320-4505
Yen-Fu LinDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
Mon-Shu HoDepartment of Physics, National Chung Hsing University, Taichung 40227, Taiwan.ORCID 0000-0001-8140-6405

Funding

Ministry of Science and Technology, Taiwan MOST- 109-2112-M-005-006-
6 · The paper itself

Abstract

One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly,

Indexed as

nonvolatile memoryresistive memorySCLCVLS growthβ-Ga2O3 nanowire

Identifiers

PMID34443844
PMCPMC8401975

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.