Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions.

Lu Wang, Yukai Zhang, Dianzhong Wen

Open access · goldAbstract read

In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

0.5field-weighted citation impact, top 36% of its field

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 6 citations in OpenAlex.

Physically Transient Gelatin-Based Memristors of Buildable Logic Gates.Gels (Basel, Switzerland) · 2025
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors at 1 institution in 1 country.

Lu WangHLJ Province Key Laboratory of Senior-Education for Electronic Engineering, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Yukai ZhangHLJ Province Key Laboratory of Senior-Education for Electronic Engineering, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Dianzhong WenHLJ Province Key Laboratory of Senior-Education for Electronic Engineering, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

Heilongjiang University · CN

Funding

Basic Research Business Funding for Provincial Universities in Heilongjiang Province KJCX201808National Natural Science Foundation of China 61801174

6 · The paper itself

Abstract

In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 10

Indexed as

bioresistive random access memorybipolar resistive switchingflexiblelogic gatetussah hemolymphWORM

Identifiers

PMID34443804

DOI10.3390/nano11081973

PMCPMC8401196

OpenAlexW3192193997

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.