ArticleApplied physics. A, Materials science & processing2021
Nanowire gate all around-TFET-based biosensor by considering ambipolar transport.
Article in Applied physics. A, Materials science & processing, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed, 39 citations in OpenAlex.
- Circular-Gate Nanoscale Air Channel Transistors: Achieving ultralow Subthreshold Swing and Working Voltage.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
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2 authors at 1 institution in 1 country.
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Abstract
This work investigated the performance of overlapped gate-on-drain of a gate all around-tunnel field-effect transistor (GAA-TFET) biosensors by considering the dielectric modulated technique by immobilizing the targeted biomolecules in the cavity region curved under the overlapped gate-on-drain. The nanowire GAA-TFET device shows excellent controllability over the channel and reduces leakage current to a greater extent. Here, we tried to make the ambipolar nature of the TFET, an advantage for the biosensor by detecting the biomolecule using variation of ambipolar current of TFET. Due to structural arrangement, the nanocavity under the overlapped gate region suppresses the ambipolar drain current by increasing the dielectric constant of the targeted biomolecules. The device can show a variation of 10
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