Evidence map›Paper›PMID 34357201›Full record

ArticleMicromachines2021

Memristor-CMOS Hybrid Neuron Circuit with Nonideal-Effect Correction Related to Parasitic Resistance for Binary-Memristor-Crossbar Neural Networks.

Tien Van Nguyen, Jiyong An, Kyeong-Sik Min

Abstract read
In one paragraph

Article in Micromachines, 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
  5. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors.

Tien Van NguyenSchool of Electrical Engineering, Kookmin University, Seoul 02707, Korea.ORCID 0000-0002-2710-768X
Jiyong AnSchool of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Kyeong-Sik MinSchool of Electrical Engineering, Kookmin University, Seoul 02707, Korea.ORCID 0000-0002-1518-7037

Funding

National Research Foundation of Korea NRF-2015R1A5A7037615, NRF-2019K1A3A1A25000279, and NRF-2021R1A2C1011631
6 · The paper itself

Abstract

Voltages and currents in a memristor crossbar can be significantly affected due to nonideal effects such as parasitic source, line, and neuron resistance. These nonideal effects related to the parasitic resistance can cause the degradation of the neural network's performance realized with the nonideal memristor crossbar. To avoid performance degradation due to the parasitic-resistance-related nonideal effects, adaptive training methods were proposed previously. However, the complicated training algorithm could add a heavy computational burden to the neural network hardware. Especially, the hardware and algorithmic burden can be more serious for edge intelligence applications such as Internet of Things (IoT) sensors. In this paper, a memristor-CMOS hybrid neuron circuit is proposed for compensating the parasitic-resistance-related nonideal effects during not the training phase but the inference one, where the complicated adaptive training is not needed. Moreover, unlike the previous linear correction method performed by the external hardware, the proposed correction circuit can be included in the memristor crossbar to minimize the power and hardware overheads for compensating the nonideal effects. The proposed correction circuit has been verified to be able to restore the degradation of source and output voltages in the nonideal crossbar. For the source voltage, the average percentage error of the uncompensated crossbar is as large as 36.7%. If the correction circuit is used, the percentage error in the source voltage can be reduced from 36.7% to 7.5%. For the output voltage, the average percentage error of the uncompensated crossbar is as large as 65.2%. The correction circuit can improve the percentage error in the output voltage from 65.2% to 8.6%. Almost the percentage error can be reduced to ~1/7 if the correction circuit is used. The nonideal memristor crossbar with the correction circuit has been tested for MNIST and CIFAR-10 datasets in this paper. For MNIST, the uncompensated and compensated crossbars indicate the recognition rate of 90.4% and 95.1%, respectively, compared to 95.5% of the ideal crossbar. For CIFAR-10, the nonideal crossbars without and with the nonideal-effect correction show the rate of 85.3% and 88.1%, respectively, compared to the ideal crossbar achieving the rate as large as 88.9%.

Indexed as

binary memristor crossbaredge intelligenceneural networksneuron circuitnonideal-effect correction

Identifiers

PMID34357201
PMCPMC8304214

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.