ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2021
Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.
Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2021. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 20 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
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Who cites it
20 citing papers in PubMed.
- Lattice Disorder in CuI Enables Filament-Free Transparent Memristors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Inorganic Hole Transport Materials for Advancing n-i-p Perovskite Solar Cells: A Comprehensive Review.Small (Weinheim an der Bergstrasse, Germany) · 2026Review
- Enhancing Stability in Next-Generation Photoelectrodes Such as Organic Semiconductor and Halide Perovskite-Based Photoelectrodes for Various Applications: Recent Advanced Passivation and Encapsulation Methods.Exploration (Beijing, China) · 2026Review
- Copper-Doped Chromium Oxide Delafossite: Sputtering Process, Material Properties, and Device Applications: A Detailed Review.ACS omega · 2025Review
- Engineering Dual p-n-Type CuI with Significant Enhanced Performance for Advanced Thermoelectric Applications.ACS applied energy materials · 2025Article
- A semi-transparent thermoelectric glazing nanogenerator with aluminium doped zinc oxide and copper iodide thin films.Communications engineering · 2024Article
- Fabrication and Characterization of Flexible CuI-Based Photodetectors on Mica Substrates by a Low-Temperature Solution Process.Materials (Basel, Switzerland) · 2024Article
- Article
- Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance.Molecules (Basel, Switzerland) · 2024Review
- The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films.RSC advances · 2024Article
- Thermoelectric Sensor with CuI Supported on Rough Glass.Nanomaterials (Basel, Switzerland) · 2024Article
- Limits to Hole Mobility and Doping in Copper Iodide.Chemistry of materials : a publication of the American Chemical Society · 2023Article
- Carrier Dynamics in Solution-Processed CuI as a P-Type Semiconductor: The Origin of Negative Photoconductivity.The journal of physical chemistry letters · 2023Article
- Copper Iodide on Spacer Fabrics as Textile Thermoelectric Device for Energy Generation.Materials (Basel, Switzerland) · 2022Article
- The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors.Materials (Basel, Switzerland) · 2022Article
- Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Review
- Research Progress of p-Type Oxide Thin-Film Transistors.Materials (Basel, Switzerland) · 2022Review
- Electrochemical capacitive performance of thermally evaporated Al-doped CuI thin films.RSC advances · 2021Article
- Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors.Materials (Basel, Switzerland) · 2021Article
- Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021Review
Corrections and comments
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Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p-n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.
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